In the power device field, a performance race has begun utilizing new wide-bandgap materials, specifically Silicon Carbide (SiC) MOSFETs. While the implementation of a Super Junction (SJ) structure is drawing significant attention for drastically improving the performance of SiC MOSFETs, the extreme complexity and cost of fabrication remain critical challenges. We are tackling these barriers using novel processing approaches.
- Validation of novel fabrication processes and device architectures via simulation