On June 4, we hosted a special lecture featuring Mr. Katsumitsu Nakamura from Mitsubishi Electric Corporation’s Power Device Works, Power Device Design Department.
He gave a lecture on the topic of “Si-based Power Semiconductor (IGBT, Diode) Technology” as part of the “Introduction to Semiconductor Technology” course. He provided a multifaceted perspective, covering not only the latest technologies in power devices and key considerations in research and development, but also the essential aspects of advancing development as a technical professional within a company. It was a very informative experience.
Participants joined the hybrid online lecture from various locations. The speaker answered each of the enthusiastic questions from students and faculty members thoughtfully and in detail, making it a very meaningful session.
We would like to express our sincere gratitude to Mr. Nakamura for his presentation.