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T. Terashima, “Superior Performance of SiC Power Devices and Its Limitation by Self-heating,” 2016 IEEE Int. Electron Devices Meet.(IEDM), San Francisco, CA, USA, pp. 10.5.1-10.5.4, 2016, doi: 10.1109/IEDM.2016.7838389.
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T. Terashima, M. Yoshizawa, M. Fukunaga and G. Majumdar, “Structure of 600 V IC and a new voltage sensing device,” 1993 IEEE 5th Proc. of ISPSD, Monterey, CA, USA, 1993, pp. 224-229, doi: 10.1109/ISPSD.1993.297076.
Y.Mukunoki, Y.Nakamura, T.Horiguchi, S.Kinouchi, Y.Nakayama, T.Terashima, M.Kuzumoto and H.Agkagi, “Characterization and modeling of 1.2kV 30-A SiC MOSFET,” IEEE Trans. Electron Devices, vol. 63, no. 11, 4339-4345, 2016, doi: 10.1109/TED.2016.2606424.
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